M. Bacha and L. Hadjabderrahmane (Algeria)
Design technique, analytical method, microwave
amplifier, matching networks, Chebyshev response.
This paper describes a design technique of broadband
microwave amplifiers using GaAs MESFET's
transistors, this technique which is an analytical method
presents a procedure for designing matching networks.
Because of the gain roll-off of microwave transistors of
approximately 6 dB/octave, the matching networks will
be designed to compensate for them using analytical
response, the problem is to derive the gain-bandwidth
limitations and to synthesis broadband bandpass
matching networks in order to achieve a desired
transducique power gain of Chebyshev response.
The performances characteristics of lumped and
distributed amplifiers are analysed after using suitable
transformation from lumped amplifier to distributed