Simulation of the Dissolved Oxygen Concentration and the pH Value at the O2-FET

J. Wiest, S. Blank, M. Brischwein, H. Grothe, and B. Wolf (Germany)


Dissolved oxygen, finite elements simulation, diffusion, ISFET


The O2-FET is a pH ion sensitive field effect transistor (ISFET) modified to measure dissolved oxygen via the acidification from an amperometric dissolved oxygen microsensor. A diffusion based finite elements model which describes the transactions at the O2-FET is introduced. Results of real measurements and of the simulation are corresponding. Therefore it is concluded that the diffusion based model is sufficient to describe the main properties of the O2-FET.

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